ELECTRON TUNNELING BETWEEN A METAL AND A SEMICONDUCTOR - CHARACTERISTICS OF AL-AL2O3-SNTE AND -GETE JUNCTIONS

被引：62

作者：

CHANG, LL

STILES, PJ

ESAKI, L

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.1709144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4440 / &

共 29 条

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[7] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J].

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[8]

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[10]

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