SYNTHESIS OF THIN-FILMS OF SEMICONDUCTOR AND REFRACTORY-METAL NITRIDES BY LASER IRRADIATION OF SOLID SAMPLES IN AMBIENT GASES

被引：23

作者：

DANNA, E

LEGGIERI, G

LUCHES, A

机构：

[1] University of Lecce, Department of Physics, Lecce

来源：

THIN SOLID FILMS | 1992年 / 218卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90922-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A review is presented of the results obtained of the formation of nitride surface layers on semiconductor (silicon, germanium) and refractory metal (titanium, zirconium, hafnium) samples by laser irradiation in nitrogen-containing atmospheres. These results show the great efficiency of the laser-induced nitridation process.

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页码：219 / 230

页数：12

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