INVESTIGATION OF FIELD, CARRIER, AND COHERENT PHONON DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS

被引：19

作者：

DEKORSY, T

KURZ, H

ZHOU, XQ

PLOOG, K

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70506 STUTTGART 80,GERMANY

[2] PAUL DRUDE INST FESTKORPERPHYS,D-10117 BERLIN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 21期

关键词：

D O I：

10.1063/1.110291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the dynamics of electric field, transport, and coherent phonons in as-grown and annealed low-temperature (LT) GaAs by an electro-optic technique on a subpicosecond time scale. The buildup and decay of space-charge fields associated with the photo-Dember effect are investigated. The recombination dynamics of trapped carriers is monitored via the ps decay of the electro-optic signal. Differences in annealed and as-grown LT GaAs are related to the different microscopic form of excess arsenic and point defect density. In the coherent phonon signal a large red shift of the LO phonon and an additional local vibration below the LO phonon provides information on structural defects in as-grown LT GaAs.

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收藏

页码：2899 / 2901

页数：3

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