1.3-MU-M P-I-N PHOTODETECTOR USING GAAS WITH AS PRECIPITATES (GAAS-AS)

被引：55

作者：

WARREN, AC ^{[1
]}

BURROUGHES, JH ^{[1
]}

WOODALL, JM ^{[1
]}

MCINTURFF, DT ^{[1
]}

HODGSON, RT ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 10期

关键词：

D O I：

10.1109/55.119178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the successful fabrication of the first GaAs detector which operates in the 1.3- to 1.5-mu-m optical range. The detector is a P-i-N photodiode with an intrinsic layer composed of undoped GaAs which was grown at 225-degrees-C and subsequently annealed at 600-degrees-C. This growth process has been demonstrated to produce a high density of As precipitates in the low-temperature grown region, which we show here to exhibit absorption through internal photoemission. The internal Schottky barrier height of the As precipitates is found to be 0.7 eV, leading to reasonable room-temperature responsivity out to around 1.7-mu-m.

引用

页码：527 / 529

页数：3

共 7 条

[1]

BURROUGHES JH, UNPUB IEEE ELECTRON

[2] INFRARED RESPONSE FROM METALLIC PARTICLES EMBEDDED IN A SINGLE-CRYSTAL SI MATRIX - THE LAYERED INTERNAL PHOTOEMISSION SENSOR [J].