PARAMETER EXTRACTION FROM IV CHARACTERISTICS OF SINGLE MOSFETS

被引:12
作者
SELMI, L
SANGIORGI, E
RICCO, B
机构
[1] UNIV BOLOGNA, DEPT ELECTR, I-40136 BOLOGNA, ITALY
[2] UNIV UDINE, DEPT PHYS, I-33100 UDINE, ITALY
关键词
D O I
10.1109/16.24353
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1094 / 1101
页数:8
相关论文
共 14 条
[1]   A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J].
CHERN, JGJ ;
CHANG, P ;
MOTTA, RF ;
GODINHO, N .
ELECTRON DEVICE LETTERS, 1980, 1 (09) :170-173
[2]  
HSU ST, 1983, RCA REV, V44, P424
[3]   GATE-VOLTAGE-DEPENDENT EFFECTIVE CHANNEL LENGTH AND SERIES RESISTANCE OF LDD MOSFETS [J].
HU, GJ ;
CHANG, C ;
CHIA, YT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2469-2475
[5]  
MULLER RS, 1977, DEVICE ELECTRONICS I, P356
[6]   BASIC PARAMETER MEASUREMENT AND CHANNEL BROADENING EFFECT IN THE SUBMICROMETER MOSFET [J].
PENG, KL ;
OH, SY ;
AFROMOWITZ, MA ;
MOLL, JL .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :473-475
[7]  
PINTO MR, 1984, PISCES 2 USERS MANUA
[8]  
PINTO MR, 1985, PISCES 2 B SUPPLEMEN
[9]  
SABNIS AG, 1979, IEDM TECH DIG, P18
[10]   SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS [J].
SHEU, BJ ;
HU, C ;
KO, PK ;
HSU, FC .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :365-367