GATE-VOLTAGE-DEPENDENT EFFECTIVE CHANNEL LENGTH AND SERIES RESISTANCE OF LDD MOSFETS

[1] Antognetti P., 1981, International Electron Devices Meeting, P574

[2] ANTONIADIS DA, 1978, 50192 STANF U INT CI

[3] CHANG CF, 1986, SOFT HARD MAGNETIC M, P29

[4] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 170 - 173

[5] MEASUREMENT OF MOSFET CONSTANTS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (01): : 10 - 12

[6] ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1245 - 1251

[7] ANALYSIS OF THE GATE-VOLTAGE-DEPENDENT SERIES RESISTANCE OF MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) : 965 - 972

[8] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 424 - 432

[9] QUADRUPLY SELF-ALIGNED MOS (QSA MOS) - A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1352 - 1358

[10] BASIC PARAMETER MEASUREMENT AND CHANNEL BROADENING EFFECT IN THE SUBMICROMETER MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 473 - 475

[1] Antognetti P., 1981, International Electron Devices Meeting, P574

[2] ANTONIADIS DA, 1978, 50192 STANF U INT CI

[3] CHANG CF, 1986, SOFT HARD MAGNETIC M, P29

[4] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 170 - 173

[5] MEASUREMENT OF MOSFET CONSTANTS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (01): : 10 - 12

[6] ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1245 - 1251

[7] ANALYSIS OF THE GATE-VOLTAGE-DEPENDENT SERIES RESISTANCE OF MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) : 965 - 972

[8] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 424 - 432

[9] QUADRUPLY SELF-ALIGNED MOS (QSA MOS) - A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1352 - 1358

[10] BASIC PARAMETER MEASUREMENT AND CHANNEL BROADENING EFFECT IN THE SUBMICROMETER MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 473 - 475