STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING

被引：106

作者：

OEHRLEIN, GS

TROMP, RM

LEE, YH

PETRILLO, EJ

机构：

来源：

关键词：

D O I：

10.1063/1.95243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：420 / 422

页数：3

共 12 条

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