STUDY OF SILICON ETCHING IN HBR SOLUTIONS USING A SCANNING ELECTROCHEMICAL MICROSCOPE

被引：54

作者：

MELTZER, S ^{[1
]}

MANDLER, D ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM, DEPT INORGAN & ANALYT CHEM, IL-91904 JERUSALEM, ISRAEL

来源：

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS | 1995年 / 91卷 / 06期

关键词：

D O I：

10.1039/ft9959101019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The etching of silicon has been studied by the scanning electrochemical microscope (SECM) technique. Etching has been accomplished in acidic fluoride solutions by electrogenerating a strong oxidant, i.e. bromine in this case, at an ultramicroelectrode which was held closely above a silicon (111) wafer. The parameters that affect the process and control the efficiency of the silicon etching were examined. A detailed mechanism of the process, which was derived from the unique advantages of the SECM and is in agreement with previous reports, is proposed.

引用

页码：1019 / 1024

页数：6

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