GROWTH OF ALPHA-AL2O3 FILMS BY MOLECULAR LAYER EPITAXY

[1] Duffy M. T., 1970, RCA Review, V31, P754

[2] REACTIVE DEPOSITION OF LOW-LOSS AL2O3 OPTICAL-WAVEGUIDES BY MODIFIED DC PLANAR MAGNETRON SPUTTERING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03): : 1238 - 1247

[3] ATOMIC LAYER EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : R65 - R81

[4] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 472 - 474

[5] REFRACTION AND DISPERSION OF SYNTHETIC SAPPHIRE [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (12) : 1377 - &

[6] MOLECULAR LAYER EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200

[7] HIGH-QUALITY SINGLE-CRYSTAL NB FILMS AND INFLUENCES OF SUBSTRATES ON THE EPITAXIAL-GROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1440 - 1446

[8] Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[9] TUNG SK, 1965, T METALL SOC AIME, V233, P572

[1] Duffy M. T., 1970, RCA Review, V31, P754

[2] REACTIVE DEPOSITION OF LOW-LOSS AL2O3 OPTICAL-WAVEGUIDES BY MODIFIED DC PLANAR MAGNETRON SPUTTERING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03): : 1238 - 1247

[3] ATOMIC LAYER EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : R65 - R81

[4] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 472 - 474

[5] REFRACTION AND DISPERSION OF SYNTHETIC SAPPHIRE [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (12) : 1377 - &

[6] MOLECULAR LAYER EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200

[7] HIGH-QUALITY SINGLE-CRYSTAL NB FILMS AND INFLUENCES OF SUBSTRATES ON THE EPITAXIAL-GROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1440 - 1446

[8] Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[9] TUNG SK, 1965, T METALL SOC AIME, V233, P572