PLASMA STIMULATED MOCVD OF GAAS

被引：35

作者：

HEINECKE, H ^{[1
]}

BRAUERS, A ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90308-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：241 / 249

页数：9

相关论文

共 20 条

[1] ARENS G, J CRYSTAL GROWTH
[2] BALK P, J VACUUM SCI TECHNOL
[3] BALK P, 1985, PHYSICAL PROBLEMS MI, P190
[4] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT
DONAHUE, TJ
REIF, R
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765
[5] EPITAXIAL-FILMS GROWN BY VACUUM MOCVD
FRAAS, LM
MCLEOD, PS
CAPE, JA
PARTAIN, LD
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 490 - 496
[6] PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS FILMS
HARIU, T
TAKENAKA, K
SHIBUYA, S
KOMATSU, Y
SHIBATA, Y
[J]. THIN SOLID FILMS, 1981, 80 (1-3) : 235 - 239
[7] HEINECKE H, 1984, J ELECTRON MATER, V13, P815, DOI 10.1007/BF02657928
[8] SELECTIVE GROWTH OF GAAS IN THE MOMBE AND MOCVD SYSTEMS
HEINECKE, H
BRAUERS, A
GRAFAHREND, F
PLASS, C
PUTZ, N
WERNER, K
WEYERS, M
LUTH, H
BALK, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 303 - 309
[9] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE
KAMON, K
TAKAGISHI, S
MORI, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 73 - 76
[10] OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS ARSENIC
KNIGHTS, JC
MAHAN, JE
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (10) : 983 - 986