ANISOTROPIC ETCHING OF SILICON IN SF6 PLASMAS - A MODEL FOR PLASMA-ETCHING

[1] PLASMA-ETCHING IN MAGNETIC MULTIPOLE MICROWAVE-DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 132 - 134

[2] ARNAL Y, UNPUB

[3] ADSORBATE DIFFUSION ON SINGLE-CRYSTAL SURFACES .1. INFLUENCE OF LATERAL INTERACTIONS [J]. SURFACE SCIENCE, 1978, 71 (03) : 583 - 598

[4] STUDIES ON PRODUCT LAYERS FORMED DURING ETCHING OF SI IN A SF6 PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1195 - 1198

[5] CHABERT P, 1983, VIDE COUCHES MINCE S, V218, P25

[6] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[7] Coburn J.W., 1982, Plasma Chem. Plasma Proc, V2, P1, DOI [10.1007/BF00566856, DOI 10.1007/BF00566856]

[8] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[9] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[10] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317

[1] PLASMA-ETCHING IN MAGNETIC MULTIPOLE MICROWAVE-DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 132 - 134

[2] ARNAL Y, UNPUB

[3] ADSORBATE DIFFUSION ON SINGLE-CRYSTAL SURFACES .1. INFLUENCE OF LATERAL INTERACTIONS [J]. SURFACE SCIENCE, 1978, 71 (03) : 583 - 598

[4] STUDIES ON PRODUCT LAYERS FORMED DURING ETCHING OF SI IN A SF6 PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1195 - 1198

[5] CHABERT P, 1983, VIDE COUCHES MINCE S, V218, P25

[6] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[7] Coburn J.W., 1982, Plasma Chem. Plasma Proc, V2, P1, DOI [10.1007/BF00566856, DOI 10.1007/BF00566856]

[8] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[9] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[10] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317