15 GHZ STATIC FREQUENCY-DIVIDER IC IN SILICON BIPOLAR TECHNOLOGY

被引：5

作者：

WEGER, P ^{[1
]}

TREITINGER, L ^{[1
]}

BIEGER, J ^{[1
]}

REIN, HM ^{[1
]}

机构：

[1] RUHR UNIV BOCHUM,D-4630 BOCHUM,FED REP GER

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 08期

关键词：

D O I：

10.1049/el:19890351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：513 / 514

页数：2

共 7 条

[1]

JENSEN JF, 1988, ISSCC, P268

[2]

Konaka S., 1986, Solid State Devices 1985. Invited Papers Presented at the 15th European Solid State Device Research Conference, P23

[3] A COMPACT PHYSICAL LARGE-SIGNAL MODEL FOR HIGH-SPEED BIPOLAR-TRANSISTORS AT HIGH-CURRENT DENSITIES .1. ONE-DIMENSIONAL MODEL [J].

STUBING, H ;

REIN, HM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1741-1751

[4] A 20-GHZ FREQUENCY-DIVIDER IMPLEMENTED WITH HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

WANG, KC ;

ASBECK, PM ;

CHANG, MF ;

SULLIVAN, GJ ;

MILLER, DL .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :383-385

[5] STATIC 7 GHZ FREQUENCY-DIVIDER IC BASED ON A 2 MU-M SI BIPOLAR TECHNOLOGY [J].

WEGER, P ;

TREITINGER, L ;

REIMANN, R ;

REIN, HM .

ELECTRONICS LETTERS, 1987, 23 (05) :192-193

[6]

WIEDER AW, 1984, SIEMENS FORSCH ENTW, V13, P246

[7] 22 GHZ 1/4 FREQUENCY-DIVIDER USING ALGAAS/GAAS HBTS [J].

YAMAUCHI, Y ;

NAGATA, K ;

NAKAJIMA, O ;

ITO, H ;

NITTONO, T ;

ISHIBASHI, T .

ELECTRONICS LETTERS, 1987, 23 (17) :881-882

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