HOPPING PHOTOCONDUCTIVITY IN AMORPHOUS-GERMANIUM

被引：3

作者：

FISCHER, R ^{[1
]}

VORNHOLZ, D ^{[1
]}

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,MARBURG,FED REP GER

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1975年 / 68卷 / 02期

关键词：

D O I：

10.1002/pssb.2220680213

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：561 / 567

页数：7

共 22 条

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LANGER, JS .

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[2]

ARNOLDUSSEN TC, 1972, J NONCRYST SOLIDS, V8, P933, DOI DOI 10.1016/0022-3093(72)90249-9

[3]

BLAKEMORE JS, 1962, SEMICONDUCTOR STAT 2

[4] THERMALLY ASSISTED HOPPING TRANSPORT IN DIORDEED SYSTEMS [J].

BRENIG, W ;

DOHLER, GH ;

WOLFLE, P .

ZEITSCHRIFT FUR PHYSIK, 1973, 258 (05) :381-400

[5] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].

CHITTICK, RC ;

ALEXANDE.JH ;

STERLING, HF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :77-&

[6] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[7]

DOBREGO VP, 1964, SOV PHYS-SOL STATE, V6, P928

[8]

DOBREGO VP, 1965, FIZ TVERD TELA+, V7, P671

[9]

DOBREGO VP, 1962, SOV PHYS-SOL STATE, V4, P402

[10]

DONOVAN TM, 1973, 5TH P INT C AM LIQ S, P549

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