CRYSTALLINITY OF A-AXIS ORIENTED YBA2CU3O7-DELTA THIN-FILMS EPITAXIALLY GROWN ON NDGAO3 (110) AND SRTIO3 (100)

被引：8

作者：

HOMMA, N ^{[1
]}

OKAYAMA, S ^{[1
]}

TAKAHASHI, H ^{[1
]}

KAWAMOTO, S ^{[1
]}

YOSHIDA, I ^{[1
]}

KAMEI, M ^{[1
]}

MORISHITA, T ^{[1
]}

HAGA, T ^{[1
]}

YAMAYA, K ^{[1
]}

机构：

[1] HOKKAIDO UNIV,DEPT NUCL ENGN,SAPPORO,HOKKAIDO 060,JAPAN

来源：

PHYSICA C | 1992年 / 194卷 / 3-4期

关键词：

D O I：

10.1016/S0921-4534(05)80025-5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial a-axis YBa2Cu3O7-delta thin films have been grown on NdGaO3 (110) and SrTiO3 (100) by on-axis RF magnetron sputtering. An excitation frequency of 94.92 MHz enhances epitaxial growth owing to a low self-bias voltage and a narrow distribution of the energy of the sputtering ions. Films on NdGaO3 (110) present good crystalline qualities: sharp streaks observed by reflection high-energy electron diffraction, less than 2% volume fraction of the c-axis oriented phase and a minimum yield, chi(min) of 3.2% analyzed by Rutherford backscattering channeling. The depth profile of Auger electron spectroscopy has revealed that the interfacial diffusion layer is less than 60 angstrom for samples on NdGaO3. The c-axis in the film plane is aligned along the NdGaO3 [001]. It is demonstrated that NdGaO3 (110) is one of the most suitable substrates for preparing epitaxial a-axis YBa2Cu3O7-delta thin films.

引用

页码：430 / 434

页数：5

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