PROTON RELEASE AND DEFECT CREATION IN MOS STRUCTURES DUE TO HIGH ELECTRIC-FIELDS

被引：5

作者：

LISOVSKII, IP

LITOVCHENKO, VG

ROMANOVA, GP

DIDENKO, PI

SCHMIDT, EG

机构：

[1] Institute of Semiconductor Physics, Ukraininan Academy of Science, Kiev

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 142卷 / 01期

关键词：

D O I：

10.1002/pssa.2211420113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using photoinjection, C-U and SIMS techniques a comparative study of the creation process of electrically active centers, together with the accompanying variations of impurity structural characteristics of the oxide caused by field treatment of MOS structures, is carried out. It is shown that in structures with the negative charge distributed in the oxide the field treatment results in the creation of interfacial defects and in partial annealing of negatively charged traps. Hydrogen movement from the oxide surface towards the Si-SiO2 interface and the appearance of SiOH complexes is observed. A generalized model of Poole-Frenkel emission of protons is developed.

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页码：107 / 116

页数：10

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