REFLECTION ELECTRON-MICROSCOPY STUDIES OF GAP(110) SURFACES IN UHV-TEM

被引：2

作者：

GAIDARDZISKAJOSIFOVSKA, M ^{[1
]}

MCCARTNEY, MR ^{[1
]}

SMITH, DJ ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

SURFACE SCIENCE | 1993年 / 287卷

关键词：

D O I：

10.1016/0039-6028(93)91127-B

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Reflection electron microscopy (REM) and reflection high energy electron diffraction (RHEED) were used in a UHV electron microscope to study the effects of various surface treatments on the topography and crystal structure of cleaved GaP(110) surfaces. Reported ion-milling and annealing cleaning treatments resulted in rough surface topography, and in good 1 x 1 RHEED patterns. Annealing at 800-degrees-C resulted in surface smoothing, but also led to dissociation of GaP with viscous flow of a Ga-rich molten phase on the surface. Regions on the surface which were not covered by the molten phase maintained the 1 x 1 reconstruction typical of the clean GaP(110) surface.

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页码：1062 / 1066

页数：5

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