HIGH-QUALITY GAAS AND GAP ON SI WITH III-V-ALLOY SLS BUFFER LAYERS

被引：9

作者：

UMENO, M

JIMBO, T

SOGA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(89)90198-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：188 / 194

页数：7

共 12 条

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[2]

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[3]

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[4] QUALITY IMPROVEMENT OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAP ON SI BY ASH3 PREFLOW [J].

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SOGA, T ;

JIMBO, T ;

UMENO, M .

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[5] REDUCTION OF DISLOCATION DENSITY IN GAAS/SI BY STRAINED-LAYER SUPERLATTICE OF INXGA1-XAS-GAASYP1-Y [J].

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[6] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SAKAI, S ;

SOGA, T ;

TAKEYASU, M ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414

[7] EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS ON SI GROWN BY MOCVD [J].

SOGA, T ;

HATTORI, S ;

SAKAI, S ;

UMENO, M .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :498-502

[8] MOCVD GROWTH OF GAAS ON SI SUBSTRATES WITH ALGAP AND STRAINED SUPERLATTICE LAYERS [J].

SOGA, T ;

HATTORI, S ;

SAKAI, S ;

TAKEYASU, M ;

UMENO, M .

ELECTRONICS LETTERS, 1984, 20 (22) :916-918

[9] MOCVD GROWTH AND CHARACTERIZATION OF GAAS AND GAP GROWN ON SI SUBSTRATES [J].

SOGA, T ;

KOHAMA, Y ;

UCHIDA, K ;

TAJIMA, M ;

JIMBO, T ;

UMENO, M .

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[10]

SOGA T, 1987, INT PVSEC, V3, P481

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