MOCVD GROWTH AND CHARACTERIZATION OF GAAS AND GAP GROWN ON SI SUBSTRATES

被引：22

作者：

SOGA, T

KOHAMA, Y

UCHIDA, K

TAJIMA, M

JIMBO, T

UMENO, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90573-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：499 / 503

页数：5

共 14 条

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[2]

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[3]

Blakeslee AE, 1987, MATER RES SOC S P, V91, P105, DOI 10.1557/PROC-91-105

[4] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

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ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[5] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

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MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[6]

LEE JW, 1987, I PHYS C SER, V83, P111

[7] REDUCTION OF DISLOCATION DENSITY IN GAAS/SI BY STRAINED-LAYER SUPERLATTICE OF INXGA1-XAS-GAASYP1-Y [J].

NISHIMURA, T ;

MIZUGUCHI, K ;

HAYAFUJI, N ;

MUROTANI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1141-L1143

[8] CHARACTERIZATION OF GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

PEARTON, SJ ;

VERNON, SM ;

ABERNATHY, CR ;

SHORT, KT ;

CARUSO, R ;

STAVOLA, M ;

GIBSON, JM ;

HAVEN, VE ;

WHITE, AE ;

JACOBSON, DC .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :862-867

[9] THICKNESS DEPENDENCE OF MATERIAL QUALITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

PEARTON, SJ ;

ABERNATHY, CR ;

CARUSO, R ;

VERNON, SM ;

SHORT, KT ;

BROWN, JM ;

CHU, SNG ;

STAVOLA, M ;

HAVEN, VE .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :775-783

[10] STRESS AND STRAIN OF GAAS ON SI GROWN BY MOCVD USING STRAINED SUPERLATTICE INTERMEDIATE LAYERS AND A 2-STEP GROWTH METHOD [J].

SOGA, T ;

IMORI, T ;

UMENO, M ;

HATTORI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05) :L536-L538

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