CHARACTERIZATION OF GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：23

作者：

PEARTON, SJ ^{[1
]}

VERNON, SM ^{[1
]}

ABERNATHY, CR ^{[1
]}

SHORT, KT ^{[1
]}

CARUSO, R ^{[1
]}

STAVOLA, M ^{[1
]}

GIBSON, JM ^{[1
]}

HAVEN, VE ^{[1
]}

WHITE, AE ^{[1
]}

JACOBSON, DC ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：862 / 867

页数：6

共 14 条

[1]

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CHO, AY .

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[3] CHARACTERIZATION OF GAAS AND SI BY A MICROWAVE PHOTOCONDUCTANCE TECHNIQUE [J].

CUMMINGS, KD ;

PEARTON, SJ ;

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[4]

FAN JCC, 1986, P MATER RES SOC, V67

[5] MICROWAVE PROPERTIES OF SELF-ALIGNED GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SILICON SUBSTRATES [J].

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KLEM, J ;

PENG, CK ;

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MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :112-114

[6] PROPERTIES OF MODFETS GROWN ON SI SUBSTRATES AT DC AND MICROWAVE-FREQUENCIES [J].

FISCHER, RJ ;

KOPP, WF ;

GEDYMIN, JS ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1407-1412

[7]

KROEMER HB, 1986, P MATER RES SOC, V67, P3

[8]

LEE JW, 1986, P MATER RES SOC, V67, P29

[9] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE [J].

OTSUKA, N ;

CHOI, C ;

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FISCHER, R ;

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MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :277-279

[10]

PEARTON SJ, UNPUB

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