METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED USING SELF-ALIGNED SILICIDE TECHNOLOGY

被引：17

作者：

TSAUR, BY

ANDERSON, CH

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.96115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：527 / 529

页数：3

共 11 条

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