SELECTIVE TUNGSTEN SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING

被引：36

作者：

TSAUR, BY ^{[1
]}

CHEN, CK ^{[1
]}

ANDERSON, CH ^{[1
]}

KWONG, DL ^{[1
]}

机构：

[1] UNIV NOTRE DAME,DEPT ELECT ENGN,NOTRE DAME,IN 46556

来源：

关键词：

D O I：

10.1063/1.334421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1890 / 1894

页数：5

共 16 条

[1] THE EFFECT OF PHOSPHORUS ION-IMPLANTATION ON MOLYBDENUM-SILICON CONTACTS
CHIANG, SW
CHOW, TP
REIHL, RF
WANG, KL
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4027 - 4032
[2] GUIVARCH A, 1978, J APPL PHYS, V49, P223
[3] FABRICATION AND THERMAL-STABILITY OF W-SI OHMIC CONTACTS
KUMAR, V
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 262 - 269
[4] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714
[5] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES
LOCKER, LD
CAPIO, CD
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4366 - 4369
[6] Okabayashi H., 1982, International Electron Devices Meeting. Technical Digest, P556
[7] OSBURN CM, 1982, VLSI SCI TECHNOLOGY, V82, P213
[8] REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES
PRETORIUS, R
HARRIS, JM
NICOLET, MA
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (04) : 667 - &
[9] TITANIUM DISILICIDE IN MOS TECHNOLOGY
RUNOVC, F
NORSTROM, H
BUCHTA, R
WIKLUND, P
PETERSSON, S
[J]. PHYSICA SCRIPTA, 1982, 26 (02): : 108 - 112
[10] Scott D. B., 1981, International Electron Devices Meeting, P538