RAMAN MICROPROBE ANALYSIS OF STRAIN INDUCED BY PATTERNED DIELECTRIC FILMS ON GAALAS STRUCTURES

被引：10

作者：

RADENS, CJ ^{[1
]}

ROUGHANI, B ^{[1
]}

JACKSON, HE ^{[1
]}

BOYD, JT ^{[1
]}

BURNHAM, RD ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT PHYS,CINCINNATI,OH 45221

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 05期

关键词：

D O I：

10.1109/3.27989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：989 / 992

页数：4

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[8] STRAINS IN SI-ON-SIO2 STRUCTURES FORMED BY OXYGEN IMPLANTATION - RAMAN-SCATTERING CHARACTERIZATION [J].

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