POSITIVE CHARGE GENERATION IN THIN SIO2-FILMS DURING NITRIDATION PROCESS

被引：26

作者：

PAN, P

PAQUETTE, C

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 05期

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D O I：

10.1063/1.96096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：473 / 475

页数：3

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