IMPROVEMENT OF DIFFUSION LENGTH IN POLYCRYSTALLINE PHOTOVOLTAIC SILICON BY PHOSPHORUS AND CHLORINE GETTERING

被引：8

作者：

JASTRZEBSKI, L

HENLEY, W

SCHIELEIN, D

LAGOWSKI, J

机构：

[1] Center for Microelectronics Research, University of South Florida,Tampa

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 11期

关键词：

D O I：

10.1149/1.2048426

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Results of chlorine and phosphorus gettering of photovoltaic (PV) polycrystalline silicon are presented. Using surface photovoltage (SPV) diffusion length (L) measurements, it has been established that PV polysilicon is very inhomogeneous and gettering only improves L values in regions in which L is relatively high and a large amount of nonprecipitated Fe and Cr is present. In regions with low L, nonprecipitated Fe and Cr were not detected in as-grown polysilicon and gettering did not cause any substantial improvement in L values. It is conceivable that recombination in these regions is controlled by grown-in defects.

引用

页码：3869 / 3872

页数：4

共 11 条

[1]

GILES D, 1990, PHYS REV B, V41, P5770

[2]

JASTRZEBSKI L, 1983, J ELECTROCHEM SOC, V140, P1152

[3]

JASTRZEBSKI L, 1990, ELECTROCHEMICAL SOC, P614

[4] NONCONTACT MAPPING OF HEAVY-METAL CONTAMINATION FOR SILICON IC FABRICATION [J].

LAGOWSKI, J ;

EDELMAN, P ;

DEXTER, M ;

HENLEY, W .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) :A185-A192

[5] IRON DETECTION IN THE PART PER QUADRILLION RANGE IN SILICON USING SURFACE PHOTOVOLTAGE AND PHOTODISSOCIATION OF IRON-BORON PAIRS [J].

LAGOWSKI, J ;

EDELMAN, P ;

KONTKIEWICZ, AM ;

MILIC, O ;

HENLEY, W ;

DEXTER, M ;

JASTRZEBSKI, L ;

HOFF, AM .

APPLIED PHYSICS LETTERS, 1993, 63 (22) :3043-3045

[6]

MISHRA K, 1992, EL SOC M, P632

[7] DEPENDENCE OF GETTERING EFFICIENCY ON METAL IMPURITIES [J].

MIYAZAKI, M ;

SANO, M ;

SADAMITSU, S ;

SUMITA, S ;

FUJINO, N ;

SHIRAIWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04) :L519-L521

[8]

NIKI Y, 1989, DEFECT CONTROL SEMIC, V1, P329

[9]

PEARCE CW, 1981, ELECTROCHEMICAL SOC, P705

[10]

SCHROTER W, 1990, APPL PHYS LETT, V56, P2207, DOI 10.1063/1.102968

← 1 2 →