DEPENDENCE OF GETTERING EFFICIENCY ON METAL IMPURITIES

被引：16

作者：

MIYAZAKI, M ^{[1
]}

SANO, M ^{[1
]}

SADAMITSU, S ^{[1
]}

SUMITA, S ^{[1
]}

FUJINO, N ^{[1
]}

SHIRAIWA, T ^{[1
]}

机构：

[1] OSAKA TITANIUM CO LTD,AMAGASAKI,HYOGO 660,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 04期

关键词：

D O I：

10.1143/JJAP.28.L519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L519 / L521

页数：3

共 7 条

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[3]

GRAFF K, 1981, SEMICONDUCTOR SILICO, V51, P331

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ORDUNG, PF .

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[6] EVALUATION OF INTRINSIC GETTERING OF GOLD BY OXIDE PRECIPITATION IN CZOCHRALSKI SILICON [J].

PIETILA, DA ;

MASSON, DB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) :686-690

[7] COMPARISON OF GETTERING TECHNIQUES BY MEANS OF INTENTIONAL QUANTITATIVE CU CONTAMINATION [J].

SANO, M ;

HORAI, M ;

MIYAZAKI, M ;

FUJINO, N ;

SHIRAIWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07) :1220-1223

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