COMPARISON OF GETTERING TECHNIQUES BY MEANS OF INTENTIONAL QUANTITATIVE CU CONTAMINATION

被引：16

作者：

SANO, M ^{[1
]}

HORAI, M ^{[1
]}

MIYAZAKI, M ^{[1
]}

FUJINO, N ^{[1
]}

SHIRAIWA, T ^{[1
]}

机构：

[1] OSAKA TITANIUM CO LTD,HYOGO 660,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 07期

关键词：

D O I：

10.1143/JJAP.27.1220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1220 / 1223

页数：4

共 24 条

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[2] POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICON
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[3] EFFECTS OF LASER BACK-SIDE DAMAGE UPON MECHANICAL-PROPERTIES OF SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1395 - 1400
[4] PLATINUM GETTERING IN SILICON BY PHOSPHORUS
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[5] REDUCTION OF LEAKAGE BY IMPLANTATION GETTERING IN VLSI CIRCUITS
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (03) : 310 - 317
[6] ION IMPLANT GETTERING OF GENERATION IMPURITIES IN SILICON INVESTIGATED USING PIXE AND RUTHERFORD BACKSCATTERING SPECTROMETRY
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3): : 63 - 69
[7] HAYAFUJI Y, 1981, J ELECTROCHEM SOC, V128, P1980
[8] BREAKDOWN IN SILICON-OXIDES CORRELATION WITH CU PRECIPITATES
HONDA, K
OHSAWA, A
TOYOKURA, N
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 270 - 271
[9] BREAKDOWN IN SILICON-OXIDES .2. CORRELATION WITH FE PRECIPITATES
HONDA, K
OHSAWA, A
TOYOKURA, N
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 582 - 584
[10] LIFETIME EVALUATION OF DENUDED ZONE QUALITY AND INTRINSIC GETTERING EFFECT ON HEAVY-METALS
IKUTA, K
OHARA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (08): : 984 - 990

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