SURFACE-CHEMISTRY OF ZN3P3 SINGLE-CRYSTALS STUDIED BY XPS

被引:19
作者
ELROD, U [1 ]
LUXSTEINER, MC [1 ]
OBERGFELL, M [1 ]
BUCHER, E [1 ]
SCHLAPBACH, L [1 ]
机构
[1] SWISS FED INST TECHNOL,FESTKORPERPHYS LAB,CH-8093 ZURICH,SWITZERLAND
来源
APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY | 1987年 / 43卷 / 03期
关键词
D O I
10.1007/BF00695623
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:197 / 201
页数:5
相关论文
共 26 条
[1]   PHOTOEMISSION AND AUGER-SPECTROSCOPY STUDIES OF THE INTERACTION OF OXYGEN WITH ZINC [J].
BRUNDLE, CR ;
BICKLEY, RI .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1979, 75 :1030-1046
[2]  
Catalano A., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P641
[3]   SURFACE MODIFICATION OF INP BY PLASMA TECHNIQUES USING HYDROGEN AND OXYGEN [J].
CLARK, DT ;
FOK, T .
THIN SOLID FILMS, 1981, 78 (03) :271-278
[4]   AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION [J].
CLARK, DT ;
FOK, T ;
ROBERTS, GG ;
SYKES, RW .
THIN SOLID FILMS, 1980, 70 (02) :261-283
[5]   MORPHOLOGICAL AND STRUCTURAL-PROPERTIES OF ZN3P2 SINGLE-CRYSTALS GROWN BY RECRYSTALLIZATION IN A CLOSED SYSTEM [J].
ELROD, U ;
LUXSTEINER, M ;
BUCHER, E ;
HONIGSCHMID, J ;
BICKMANN, K ;
GAIN, L .
JOURNAL OF CRYSTAL GROWTH, 1984, 67 (02) :195-201
[6]   OPTICAL-PROPERTIES OF ZN3P2 [J].
FAGEN, EA .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6505-6515
[7]   INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].
FRITZSCHE, D .
ELECTRONICS LETTERS, 1978, 14 (03) :51-52
[8]   COMPARISON OF LOW-TEMPERATURE OXIDES ON POLYCRYSTALLINE INP BY AES, SIMS AND XPS [J].
KAZMERSKI, LL ;
IRELAND, PJ ;
SHELDON, P ;
CHU, TL ;
CHU, SS ;
LIN, CL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1061-1066
[9]   SURFACE AND INTERFACE PROPERTIES OF ZN3P2 SOLAR-CELLS [J].
KAZMERSKI, LL ;
IRELAND, PJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :368-371
[10]   X-RAY PHOTOEMISSION FROM ZINC - EVIDENCE FOR EXTRA-ATOMIC RELAXATION VIA SEMILOCALIZED EXCITONS [J].
LEY, L ;
KOWALCZYK, SP ;
MCFEELY, FR ;
POLLAK, RA ;
SHIRLEY, DA .
PHYSICAL REVIEW B, 1973, 8 (06) :2392-2402