MEASUREMENTS AND INTERPRETATION OF LOW-FREQUENCY NOISE IN FETS - COMMENT

被引：3

作者：

BERZ, F ^{[1
]}

机构：

[1] MULLARD RES LABS,CROSS OAK LANE,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

关键词：

D O I：

10.1109/T-ED.1975.18121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：293 / 294

页数：2

共 8 条

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BERZ, F .

[2] TEST OF MCWHORTERS MODEL OF LOW-FREQUENCY NOISE IN SI-MOSTS [J].

BERZ, F ;

PRIOR, CG .

[3]

CHRISTENSSON S, 1968, SOLID STATE ELECTRON, V11, P796

[4] THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE [J].

FU, HS ;

SAH, CT .

[5] SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS [J].

HSU, ST .

[6] CHARACTERIZATION OF LOW 1/F NOISE IN MOS TRANSISTORS [J].

KLAASSEN, FM .

LEVENTHAL, EA .

[8]

MANSOUR IRM, 1969, BRIT J APPL PHYS, V2, P1067