A NEW GROWTH METHOD USING SOURCE CURRENT CONTROL TO SUPPLY SOLUTE ELEMENTS-DEMONSTRATION OF IN1-XGAXAS CASE

被引：17

作者：

NAKAJIMA, K

YAMAZAKI, S

UMEBU, I

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 01期

关键词：

D O I：

10.1143/JJAP.23.L26

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L26 / L28

页数：3

共 7 条

[1]

BACHMANN KJ, 1978, J CRYST GROWTH, V43, P752, DOI 10.1016/0022-0248(78)90156-2

[2] PELTIER-INDUCED LIQUID-PHASE EPITAXY AND COMPOSITIONAL CONTROL OF MM-THICK LAYERS OF (AL,GA)AS [J].

DANIELE, JJ ;

HEBLING, AJ .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4325-4327

[3] LIQUID-PHASE ELECTROEPITAXY - GROWTH KINETICS [J].

JASTRZEBSKI, L ;

LAGOWSKI, J ;

GATOS, HC ;

WITT, AF .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5909-5919

[4] PREPARATION AND PROPERTIES OF BULK GAXINL-XAS CRYSTALS [J].

LEU, YT ;

THIEL, FA ;

SCHEIBER, H ;

RUBIN, JJ ;

MILLER, BI ;

BACHMANN, KJ .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) :663-674

[5] DIRECT LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-QUALITY INP ON (111)A ORIENTED IN0.53GA0.47AS [J].

NAKAJIMA, K ;

YAMAZAKI, S ;

AKITA, K .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :535-545

[6]

NAKAJIMA K, 1979, J APPL PHYS, V50, P4975, DOI 10.1063/1.325575

[7] PREPARATION AND PROPERTIES OF BULK IN1-XGAXAS ALLOYS [J].

WAGNER, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (09) :1193-&

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