PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF THIN CRYSTALLINE SEMICONDUCTOR AND CONDUCTOR FILMS

被引：30

作者：

REIF, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572360

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：429 / 435

页数：7

共 47 条

[1]

ADAMS AC, 1983, VLSI TECHNOLOGY, pCH3

[2]

AKITMOTO K, 1981, APPL PHYS LETT, V39, P445, DOI 10.1063/1.92733

[3]

BURGER WR, 1983, 4TH P EUR C CHEM VAP, P265

[4]

BURGER WR, 1982, VLSI SCI TECHNOLOGY, P87

[5] AN INVESTIGATION OF MICROCRYSTALLINE FILMS PRODUCED BY A DC-GLOW DISCHARGE IN SILANE AND HYDROGEN [J].

CARLSON, DE ;

SMITH, RW .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :749-760

[6]

Chapman B., 1980, GLOW DISCHARGE PROCE

[7] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS [J].

CHU, JK ;

TANG, CC ;

HESS, DW .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :75-77

[8] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J].

COBURN, JW ;

KAY, E .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :4965-4971

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371

[10] LOW-TEMPERATURE SILICON EPITAXY USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION WITH AND WITHOUT PLASMA ENHANCEMENT [J].

DONAHUE, TJ ;

BURGER, WR ;

REIF, R .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :346-348

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