SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON M-P+-N STRUCTURES INCLUDING FREE-CARRIERS

被引:29
作者
SCHWARTZ, GP
GUALTIERI, GJ
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关键词
D O I
10.1149/1.2108848
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1266 / 1268
页数:3
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共 17 条
[11]   EFFECT OF THE PRESENCE OF AN INVERSION LAYER IN AN MPN STRUCTURE [J].
ROY, SB ;
DAW, AN .
SOLID-STATE ELECTRONICS, 1982, 25 (02) :169-173
[12]  
SCHRYER NL, ATT53 COMP SCI TECHN
[13]  
SCHRYER NL, ATT52 COMP SCI TECHN
[14]   CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].
SHANNON, JM .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :537-543
[15]  
Sze S. M., 1981, PHYSICS SEMICONDUCTO, P18
[16]   METAL P-N SCHOTTKY-BARRIER DIODES [J].
VANDERZIEL, A .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :269-272
[17]  
WU CY, 1981, SOLID STATE ELECTRON, V24, P857, DOI 10.1016/0038-1101(81)90102-7