HIGH-PURITY IN0.5GA0.5P GROWN ON GAAS BY LIQUID-PHASE EPITAXY

被引：4

作者：

WU, MC ^{[1
]}

SU, YK ^{[1
]}

CHENG, KY ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,INST ELECT & COMP ENGN,SEMICOND & SYST LABS,TAINAN,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 01期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - Surfaces - SUBSTRATES;

D O I：

10.1143/JJAP.25.L90

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High purity In//0//. //5Ga//0//. //5P epitaxial layers lattice-matched to GaAs substrates were grown by liquid phase epitaxy using a supercooling technique. The lowest carrier concentration of 3 multiplied by 10**1**5 cm** minus **3 has been achieved in the layer grown with a high temperature baked In solution and a supersaturation temperature of 6 degree C. A deep electron trap located at E//c-0. 39 ev was detected by deep level transient spectroscopy, and its concentration is below 22 multiplied by 10**1**4 cm** minus **3.

引用

页码：L90 / L91

页数：2

共 5 条

[1]

MCVITTIE JP, 1972, 2KSG821 STANDF U STA

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MONDRY, MJ ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :175-177

[3]

Stringfellow G. B., 1972, J ELECTRON MATER, V1, P437

[4] LIQUID-PHASE-EPITAXIAL GROWTH OF INO.49GA0.51 P ON (100) GAAS BY A SUPERCOOLING METHOD [J].

WU, MC ;

SU, YK ;

CHENG, KY ;

CHANG, CY .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1537-1541

[5] ALLOY FLUCTUATION IN MIXED COMPOUND SEMICONDUCTORS AS STUDIED BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

YOSHINO, J ;

TACHIKAWA, M ;

MATSUDA, N ;

MIZUTA, M ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01) :L29-L31

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