STRUCTURAL AND CHEMICAL-ANALYSIS OF A SILICON-NITRIDE FILM ON GAAS BY NULL ELLIPSOMETRY

被引：2

作者：

ALTEROVITZ, SA ^{[1
]}

BUABBUD, GH ^{[1
]}

WOOLLAM, JA ^{[1
]}

LIU, DC ^{[1
]}

机构：

[1] UNIV NEBRASKA,DEPT ELECT ENGN,LINCOLN,NE 68588

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 85卷 / 01期

关键词：

D O I：

10.1002/pssa.2210850108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multiple-wavelength-angle-of-incidence null ellipsometry together with the effective medium approximation were used to evaluate the composition and geometrical structure of an insulating film made of silicon nitride and silicon oxide on a GaAs substrate.

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页码：69 / 76

页数：8

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