SPEED POWER IN PLANAR TWO-DIMENSIONAL ELECTRON-GAS FET DCFL CIRCUIT - A THEORETICAL APPROACH

被引：3

作者：

DELAGEBEAUDEUF, D

LINH, NT

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 12期

关键词：

D O I：

10.1049/el:19820347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：510 / 512

页数：3

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[1] PLANAR ENHANCEMENT MODE TWO-DIMENSIONAL ELECTRON-GAS FET ASSOCIATED WITH A LOW ALGAAS SURFACE-POTENTIAL
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[2] DELAGEBEAUDEUF D, 1982, UNPUB IEEE T ED, V29
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[J]. ELECTRONICS LETTERS, 1981, 17 (15) : 545 - 547
[4] ANALYSIS FOR OPTIMUM THRESHOLD VOLTAGE AND LOAD CURRENT OF E-D-TYPE GAAS DCFL CIRCUITS
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[5] LINH NT, 1981, SEP GAAS REL COMP S
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600
[7] HIGH-SPEED TWO-DIMENSIONAL ELECTRON-GAS FET LOGIC
TUNG, PN
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DELESCLUSE, P
CHAPLART, J
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[J]. ELECTRONICS LETTERS, 1982, 18 (03) : 109 - 110