RESONANT TUNNELING DIODES AND TRANSISTORS WITH A ONE-DIMENSIONAL, 2-DIMENSIONAL, OR 3-DIMENSIONAL ELECTRON EMITTER

We calculate the current versus emitter to collector voltage, current versus emitter Fermi energy, and current versus potential energy in the quantum well for double-barrier resonant tunneling devices having a one-, two-, or three-dimensional electron emitter. We consider both transistor and diode operation of the devices. For each device, the current is obtained using a method which describes the effects of finite temperature, finite voltage, and free-electron motion perpendicular to the tunneling direction as independent convolutions.