PREDICTION OF A LOW-SPIN GROUND-STATE IN THE GAAS-V2+ IMPURITY SYSTEM

被引：41

作者：

KATAYAMAYOSHIDA, H ^{[1
]}

ZUNGER, A ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2961

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2961 / 2964

页数：4

共 26 条

[1] THEORETICAL EVIDENCE FOR LOW-SPIN GROUND-STATES OF EARLY INTERSTITIAL AND LATE SUBSTITUTIONAL 3D TRANSITION-METAL IONS IN SILICON [J].

BEELER, F ;

ANDERSEN, OK ;

SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (14) :1498-1501

[2]

Brandt C.H., UNPUB

[3] IDENTIFICATION OF A VANADIUM-RELATED LEVEL IN LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS [J].

BRANDT, CD ;

HENNEL, AM ;

PAWLOWICZ, LM ;

DABKOWSKI, FP ;

LAGOWSKI, J ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :607-609

[4]

Caldas M., UNPUB

[5] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J].

CLERJAUD, B .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19) :3615-3661

[6] OPTICAL AND ELECTRON-PARAMAGNETIC-RES STUDY OF NI+ (3D9) IN ZNS [J].

CLERJAUD, B ;

GELINEAU, A ;

GENDRON, F ;

PORTE, C ;

BARANOWSKI, JM ;

LIRO, Z .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (21) :3837-3848

[7] LEVEL POSITIONS OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1982, 25 (08) :4972-4980

[8] MANY-ELECTRON MULTIPLET EFFECTS IN THE SPECTRA OF 3D IMPURITIES IN HETEROPOLAR SEMICONDUCTORS [J].

FAZZIO, A ;

CALDAS, MJ ;

ZUNGER, A .

PHYSICAL REVIEW B, 1984, 30 (06) :3430-3455

[9] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE [J].

FAZZIO, A ;

LEITE, JR .

PHYSICAL REVIEW B, 1980, 21 (10) :4710-4720

[10]

HAGE J, 1985, J ELECTRON MATER A, V14, P1051

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