Influence of experimental parameters on the determination of tetragonal distortion in heterostructures by LACBED

被引:8
作者
Armigliato, A [1 ]
Balboni, R [1 ]
Corticelli, F [1 ]
Frabboni, S [1 ]
机构
[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
来源
MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1995年 / 6卷 / 5-6期
关键词
D O I
10.1051/mmm:1995135
中图分类号
TH742 [显微镜];
学科分类号
摘要
The LACBED technique has been applied to the determination of the tetragonal distortion in Si1-xGex/Si heterostructures, which are of great interest in the device technology. The strain determination has been performed on plan sections in an analytical electron microscope. The agreement between this strain value and the tetragonal distortion is influenced mainly by the local sample flatness and the acceleration voltage.
引用
收藏
页码:449 / 456
页数:8
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