ONLINE ION-IMPLANTATION FOR QUANTIFICATION IN SECONDARY ION MASS-SPECTROMETRY - DETERMINATION OF TRACE CARBON IN THIN-LAYERS OF SILICON

被引：16

作者：

SMITH, HE ^{[1
]}

MORRISON, GH ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT CHEM,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1021/ac00290a052

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：2663 / 2668

页数：6

共 17 条

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[2] Bottiger J., 1971, Radiation Effects, V11, P69, DOI 10.1080/00337577108230451
[3] BROWN JD, 1984, SECONDARY ION MASS S, V4, P296
[4] CHU PK, 1982, THESIS CORNELL U ITH
[5] GIBBONS JF, 1975, PROJECTED RANGE STAT
[6] GNASER H, 1982, 29TH P INT FIELD EM, P401
[7] QUANTITATIVE ION-IMPLANTATION - THEORETICAL ASPECTS
GRIES, WH
[J]. INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1979, 30 (02): : 97 - 112
[8] QUANTITATIVE ION-IMPLANTATION - PRACTICE
GRIES, WH
[J]. INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1979, 30 (02): : 113 - 125
[9] JAMBA DM, 1977, NBS40039 SPEC PUBL
[10] ION-IMPLANTED STANDARDS FOR SECONDARY ION MASS-SPECTROMETRIC DETERMINATION OF THE 1A-7A GROUP ELEMENTS IN SEMICONDUCTING MATRICES
LETA, DP
MORRISON, GH
[J]. ANALYTICAL CHEMISTRY, 1980, 52 (03) : 514 - 519