101-STAGE-2 MU-M GATE RING OSCILLATORS IN LASER-GROWN SILICON ISLANDS EMBEDDED IN SIO2

被引：5

作者：

KUGIMIYA, K

FUSE, G

AKIYAMA, S

NISHIKAWA, A

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 09期

关键词：

D O I：

10.1109/EDL.1982.25564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：270 / 272

页数：3

共 6 条

[1] FUKUMOTO M, 1981, 1981 S VLSI TECHN HA, V28
[2] FUSE G, 1982, 29TH P M JPN SOC APP, V4, P593
[3] MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON
KAMINS, TI
LEE, KF
GIBBONS, JF
SARASWAT, KC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 290 - 293
[4] CW LASER ANNEALING OF POLYCRYSTALLINE SILICON ON SIO2 AND EFFECTS OF SUCCESSIVE FURNACE ANNEALING
KUGIMIYA, K
FUSE, G
INOUE, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1982, 21 (01): : L19 - L21
[5] KUGIMIYA K, 1982, I ELECT COMM ENG JPN, V124, P67
[6] RING OSCILLATORS FABRICATED IN LASER-ANNEALED SILICON-ON-INSULATOR
LAM, HW
TASCH, AF
HOLLOWAY, TC
LEE, KF
GIBBONS, JF
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 99 - 100