LINE-SHAPE ANOMALY IN THE LOCAL VIBRATIONAL-MODE OF A SHALLOW ACCEPTOR IN GAAS

被引:15
作者
SHANABROOK, BV [1 ]
MOORE, WJ [1 ]
KENNEDY, TA [1 ]
RUDEN, PP [1 ]
机构
[1] N CAROLINA STATE UNIV,RALEIGH,NC 27695
来源
PHYSICAL REVIEW B | 1984年 / 30卷 / 06期
关键词
D O I
10.1103/PhysRevB.30.3563
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3563 / 3565
页数:3
相关论文
共 8 条
[1]   INFRA-RED STUDY OF DEFECTS PRODUCED IN N-TYPE SILICON BY ELECTRON IRRADIATION AT LOW TEMPERATURES [J].
BEAN, AR ;
NEWMAN, RC .
SOLID STATE COMMUNICATIONS, 1971, 9 (04) :271-&
[2]   CARBON IN SEMI-INSULATING, LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
HUNTER, AT ;
KIMURA, H ;
BAUKUS, JP ;
WINSTON, HV ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :74-76
[3]  
LEIGH RS, 1982, J PHYS C SOLID STATE, V15, pL1045
[4]  
MOORE WJ, 1984, B AM PHYS SOC, V29, P477
[5]   DIRECT EVIDENCE FOR THE SITE OF SUBSTITUTIONAL CARBON IN GAAS USING LOCALIZED VIBRATIONAL-MODE SPECTROSCOPY [J].
THEIS, WM ;
BAJAJ, KK ;
LITTON, CW ;
SPITZER, WG .
PHYSICA B & C, 1983, 117 (MAR) :116-118
[6]   DIRECT EVIDENCE FOR THE SITE OF SUBSTITUTIONAL CARBON IMPURITY IN GAAS [J].
THEIS, WM ;
BAJAJ, KK ;
LITTON, CW ;
SPITZER, WG .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :70-72
[7]   BORON IMPURITY ANTI-SITE DEFECTS IN P-TYPE GALLIUM-RICH GALLIUM-ARSENIDE [J].
WOODHEAD, J ;
NEWMAN, RC ;
GRANT, I ;
RUMSBY, D ;
WARE, RM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (28) :5523-5533
[8]  
1961, PHYS REV, V124, P1966