BORON IMPURITY ANTI-SITE DEFECTS IN P-TYPE GALLIUM-RICH GALLIUM-ARSENIDE

被引：38

作者：

WOODHEAD, J ^{[1
]}

NEWMAN, RC ^{[1
]}

GRANT, I ^{[1
]}

RUMSBY, D ^{[1
]}

WARE, RM ^{[1
]}

机构：

[1] CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 28期

关键词：

D O I：

10.1088/0022-3719/16/28/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5523 / 5533

页数：11

共 34 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] INFRA-RED STUDY OF DEFECTS PRODUCED IN N-TYPE SILICON BY ELECTRON IRRADIATION AT LOW TEMPERATURES [J].

BEAN, AR ;

NEWMAN, RC .

SOLID STATE COMMUNICATIONS, 1971, 9 (04) :271-&

[3] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

CLEGG, JB ;

NEWMAN, RC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339

[4] LOW-SYMMETRY INTERSTITIAL BORON CENTER IN IRRADIATED GALLIUM-ARSENIDE [J].

BROZEL, MR ;

NEWMAN, RC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (15) :3135-3146

[5]

CLEGG JB, 1981, 1980 P INT C SEM 3 5, P80

[6] INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS [J].

ELLIOTT, KR ;

HOLMES, DE ;

CHEN, RT ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :898-901

[7] RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS [J].

ELLIOTT, KR .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :274-276

[8] LOCALIZED MODE FREQUENCY FOR SUBSTITUTIONAL IMPURITIES IN ZINC BLENDE TYPE CRYSTALS [J].

GAUR, SP ;

VETELINO, JF ;

MITRA, SS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (12) :2737-&

[9]

GRIMM A, 1975, I PHYS C SER, V23, P332

[10]

HOBGOOD HM, 1981, 1980 P INT C SEM 3 5, P28

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