BORON IMPURITY ANTI-SITE DEFECTS IN P-TYPE GALLIUM-RICH GALLIUM-ARSENIDE

被引：38

作者：

WOODHEAD, J ^{[1
]}

NEWMAN, RC ^{[1
]}

GRANT, I ^{[1
]}

RUMSBY, D ^{[1
]}

WARE, RM ^{[1
]}

机构：

[1] CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 28期

关键词：

D O I：

10.1088/0022-3719/16/28/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5523 / 5533

页数：11

共 34 条

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[19] BEHAVIOR OF BORON IMPURITIES IN N-TYPE GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE [J].

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[20] BORON AND CARBON IMPURITIES IN GALLIUM-ARSENIDE [J].

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