DEFECT CREATION IN THE ACCUMULATION LAYER OF A-SI-H THIN-FILM TRANSISTORS

被引：20

作者：

NICKEL, N ^{[1
]}

FUHS, W ^{[1
]}

MELL, H ^{[1
]}

机构：

[1] UNIV MARBURG,WISSENSCHAFTLICHES ZENTRUM MAT WISSENSCH,W-3550 MARBURG,GERMANY

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1990年 / 61卷 / 02期

关键词：

D O I：

10.1080/13642819008205524

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metastable changes in a-Si: H/a-SiNx: H TFTs caused by prolonged application of high gate voltages and by light exposure are studied by measurements of the transfer characteristics and by a transient current spectroscopy (TCS). Voltage stress leads to a strong shift of the threshold voltage due to charge trapping in the nitride and also to the creation of metastable defects in the accumulation layer. This voltage-induced defect generation is thermally activated with an energy near 0.7 eV and therefore, at room temperature, is less effective than defect creation by light soaking. © 1990 Taylor & Francis Ltd.

引用

页码：251 / 261

页数：11

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