BAND OFFSETS FOR THE SILICON-NITRIDE AMORPHOUS-SILICON INTERFACE - IMPLICATIONS FOR CHARGE TRANSPORT AND TRAPPING IN SILICON-NITRIDE

被引：9

作者：

JACKSON, WB

MOYER, MD

TSAI, CC

MARSHALL, J

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90214-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：891 / 894

页数：4

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