LOW-CAPACITANCE PBTE PHOTODIODES

被引：12

作者：

HOLLOWAY, H ^{[1
]}

YEUNG, KF ^{[1
]}

机构：

[1] FORD MOTOR CO,RES STAFF,DEARBORN,MI 48121

来源：

关键词：

D O I：

10.1063/1.89338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：210 / 212

页数：3

共 9 条

[1] HIGH-SPEED PB1-XSNXTE PHOTODIODES
ANDREWS, AM
PASKO, JG
GERTNER, ER
HIGGINS, JA
LONGO, JT
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (06) : 285 - &
[2] BATE RT, 1968, PHYS REV LETT, V13, P180
[3] P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION
DONNELLY, JP
LINDLEY, WT
FOYT, AG
HARMAN, TC
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (08) : 279 - &
[4] THIN-FILM (PB,SN)SE PHOTODIODES FOR 8-12-MU-M OPERATION
HOHNKE, DK
HOLLOWAY, H
YEUNG, KF
HURLEY, M
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 98 - 100
[5] INFRARED DETECTION BY SCHOTTKY BARRIERS IN EPITAXIAL PBTE
LOGOTHETIS, EM
HOLLOWAY, H
VARGA, AJ
WILKES, E
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (09) : 318 - +
[6] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES
ROLLS, WH
EDDOLLS, DV
[J]. INFRARED PHYSICS, 1973, 13 (02): : 143 - 147
[7] 1974, DAAK0273C0225 CONTR
[8] 1975, DAAK0274C0181 CONTR
[9] 1974, DAAK0274C0124 CONTR