SHALLOW POSITRON TRAPS IN GAAS

被引:151
作者
SAARINEN, K [1 ]
HAUTOJARVI, P [1 ]
VEHANEN, A [1 ]
KRAUSE, R [1 ]
DLUBEK, G [1 ]
机构
[1] MARTIN LUTHER UNIV,SEKT PHYS,DDR-4020 HALLE,GER DEM REP
来源
PHYSICAL REVIEW B | 1989年 / 39卷 / 08期
关键词
D O I
10.1103/PhysRevB.39.5287
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5287 / 5296
页数:10
相关论文
共 35 条
[1]  
[Anonymous], 1983, POSITRON SOLID STATE
[2]  
Ashcroft N. W., 1976, SOLID STATE PHYS, P579
[3]   ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330
[4]   POSITRON DIFFUSION IN METALS [J].
BERGERSEN, B ;
PAJANNE, E ;
KUBICA, P ;
STOTT, MJ ;
HODGES, CH .
SOLID STATE COMMUNICATIONS, 1974, 15 (08) :1377-1380
[5]   ELECTRON AND POSITRON ENERGY-LEVELS IN SOLIDS [J].
BOEV, OV ;
PUSKA, MJ ;
NIEMINEN, RM .
PHYSICAL REVIEW B, 1987, 36 (15) :7786-7794
[6]   POSITRON-ANNIHILATION SPECTROSCOPY OF NATIVE VACANCIES IN AS-GROWN GAAS [J].
CORBEL, C ;
STUCKY, M ;
HAUTOJARVI, P ;
SAARINEN, K ;
MOSER, P .
PHYSICAL REVIEW B, 1988, 38 (12) :8192-8208
[7]   INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION [J].
DANNEFAER, S ;
HOGG, B ;
KERR, D .
PHYSICAL REVIEW B, 1984, 30 (06) :3355-3366
[8]   VACANCY INTERACTIONS IN GAAS [J].
DANNEFAER, S ;
KERR, D .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :591-594
[9]   POINT-DEFECTS IN GAAS STUDIED BY CORRELATED POSITRON LIFETIME, OPTICAL, AND ELECTRICAL MEASUREMENTS .1. NATIVE POINT-DEFECTS AND THEIR COMPLEXES IN AS-GROWN GAAS [J].
DLUBEK, G ;
DLUBEK, A ;
KRAUSE, R ;
BRUMMER, O ;
FRIEDLAND, K ;
RENTZSCH, R .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (02) :419-432
[10]   POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS [J].
DLUBEK, G ;
BRUMMER, O ;
PLAZAOLA, F ;
HAUTOJARVI, P .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (03) :331-344