CONCENTRATION OF NATIVE POINT-DEFECTS IN SI SINGLE-CRYSTALS AT HIGH-TEMPERATURES

The concentration of dominant native defects in a float-zoned Si single crystal at high temperatures was directly determined from the difference between the macroscopic linear thermal expansion and the lattice-parameter thermal expansion. The concentration fraction of native defects in thermal equilibrium at 1300 K is (3.62.7)×10-7, or (1.81.3)×1016 atoms cm-3. It is found that vacancies are predominant over interstitial atoms in concentration. © 1990 The American Physical Society.