PHOTOCONDUCTIVITY OF LIGHTLY BORON DOPED A-SI-H

被引：13

作者：

JOUSSE, D

CHAUSSAT, C

VAILLANT, F

BRUYERE, JC

LESIMPLE, F

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90736-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：627 / 630

页数：4

共 9 条

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JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :295-298

[3]

BUSTARRET E, UNPUB

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Rose A., 1978, CONCEPTS PHOTOCONDUC, V2nd ed.

[8] MAJORITY AND MINORITY-CARRIER LIFETIMES IN DOPED A-SI JUNCTIONS AND THE ENERGY OF THE DANGLING-BOND STATE [J].

SPEAR, WE ;

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VAILLANT F, UNPUB

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