THE RELIABILITY OF SCHOTTKY-BARRIER RESTRICTED GAAS/GAALAS LEDS

[1] NEW STRIPE-GEOMETRY LASER WITH SIMPLIFIED FABRICATION PROCESS [J]. ELECTRONICS LETTERS, 1979, 15 (14) : 441 - 442

[2] A SCHOTTKY-BARRIER-DELINEATED STRIPE STRUCTURE FOR A GAINASP-INP-CW LASER [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 845 - 847

[3] NEW RESTRICTED CONTACT LEDS USING A SCHOTTKY-BARRIER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : 1487 - 1491

[4] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &

[5] CONTINUOUS OPERATION OF GAAS JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200 DEGREES K [J]. APPLIED PHYSICS LETTERS, 1967, 11 (09) : 292 - &

[6] ELECTROMIGRATION OF TI-AU THIN-FILM CONDUCTORS AT 180-DEGREES C [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3757 - 3767

[7] Ennaceur A., 1971, OPT COMMUN, V31, P47, DOI [DOI 10.1016/0030-4018(71)90157-X, 10.1016/0166-4328(88)90157-x]

[8] HERSEE SD, 1977, P INT ELECTRON DEVIC, P567

[9] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[10] PLANAR, FAST, RELIABLE, SINGLE-HETEROJUNCTION LIGHT-EMITTING-DIODES FOR OPTICAL LINKS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (09): : 1549 - 1557

[1] NEW STRIPE-GEOMETRY LASER WITH SIMPLIFIED FABRICATION PROCESS [J]. ELECTRONICS LETTERS, 1979, 15 (14) : 441 - 442

[2] A SCHOTTKY-BARRIER-DELINEATED STRIPE STRUCTURE FOR A GAINASP-INP-CW LASER [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 845 - 847

[3] NEW RESTRICTED CONTACT LEDS USING A SCHOTTKY-BARRIER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : 1487 - 1491

[4] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &

[5] CONTINUOUS OPERATION OF GAAS JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200 DEGREES K [J]. APPLIED PHYSICS LETTERS, 1967, 11 (09) : 292 - &

[6] ELECTROMIGRATION OF TI-AU THIN-FILM CONDUCTORS AT 180-DEGREES C [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3757 - 3767

[7] Ennaceur A., 1971, OPT COMMUN, V31, P47, DOI [DOI 10.1016/0030-4018(71)90157-X, 10.1016/0166-4328(88)90157-x]

[8] HERSEE SD, 1977, P INT ELECTRON DEVIC, P567

[9] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[10] PLANAR, FAST, RELIABLE, SINGLE-HETEROJUNCTION LIGHT-EMITTING-DIODES FOR OPTICAL LINKS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (09): : 1549 - 1557