A DIRECT COMPARISON OF LEC GAAS GROWN USING LOW-PRESSURE AND HIGH-PRESSURE TECHNIQUES

被引：2

作者：

DUNCAN, WM

WESTPHAL, GH

SHERER, JB

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 06期

关键词：

D O I：

10.1109/EDL.1983.25703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：199 / 201

页数：3

共 15 条

[1] A SINGLE STEP SELECTIVE IMPLANTATION TECHNOLOGY FOR MULTIPLY DOPED LAYERS USING PROXIMITY ANNEALING [J].

DUNCAN, WM ;

WILLIAMS, RE .

ELECTRON DEVICE LETTERS, 1981, 2 (12) :309-311

[2] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].

FAIRMAN, RD ;

CHEN, RT ;

OLIVER, JR ;

CHEN, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :135-140

[3]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[4] PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS [J].

HAISTY, RW ;

STRATTON, R ;

MEHAL, EW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) :829-&

[5] MEASUREMENT OF HIGH-RESISTIVITY SEMICONDUCTORS USING VANDERPAUW METHOD [J].

HEMENGER, PM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) :698-700

[6] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].

HOBGOOD, HM ;

ELDRIDGE, GW ;

BARRETT, DL ;

THOMAS, RN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :140-149

[7]

Holmes D. E., 1982, IEEE T ELECTRON DEV, V29, P1045

[8]

HUGHES B, 1982, P INT GAAS RELATED C

[9] A COMPARATIVE-STUDY OF THERMAL-STRESS INDUCED DISLOCATION GENERATION IN PULLED GAAS, INP, AND SI CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR ;

NIELSEN, JW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3331-3336

[10] COMPENSATION MECHANISMS IN GAAS [J].

MARTIN, GM ;

FARGES, JP ;

JACOB, G ;

HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

← 1 2 →